Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride

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Fältnamn	Indikatorer	Metadata
000		02952naa a2200385 4500
001		oai:DiVA.org:liu-45141
003		SwePub
008		091010s1999 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-451412 URI
024	7	a https://doi.org/10.1103/PhysRevB.60.17462 DOI
040		a (SwePub)liu
041		a engb eng
042		9 SwePub
072	7	a ref2 swepub-contenttype
072	7	a art2 swepub-publicationtype
100	1	a Buyanova, Irina,d 1960-u Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material4 aut0 (Swepub:liu)iribo40
245	1 0	a Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride
264	1	c 1999
338		a print2 rdacarrier
520		a Photoluminescence (PL) spectroscopy is employed to determine the nature of a near-infrared PL emission with a no-phonon line at ∼0.88 eV, commonly present in electron-irradiated GaN. This PL emission is suggested to originate from an internal transition between a moderately shallow excited state (with an ionization energy ∼21 meV) and the deep ground state (with an ionization energy ∼900 meV) of a deep defect. The existence of a higher-lying second excited state related to the 0.88-eV PL center is also shown from temperature-dependent studies. A different electronic character of the wave functions related to the first and second excited states has been revealed by PL polarization measurements. Since the PL emission has been observed with comparable intensity in all electron-irradiated GaN samples independent of doping on the starting material, it is proposed that either native defects, or common residual contaminants or their complexes are involved. The substitutional ON donor (or related complex) is considered as the most probable candidate, based on the observed striking similarity in the local vibrational properties between the 0.88-eV PL centers and the substitutional OP donor in GaP.
653		a NATURAL SCIENCES
653		a NATURVETENSKAP
700	1	a Wagner, Matthias,d 1969-u Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)matwa12
700	1	a Chen, Weimin,d 1959-u Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material4 aut0 (Swepub:liu)weich55
700	1	a Edwards, N. V.4 aut
700	1	a Monemar, Bo,d 1942-u Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)bomo46
700	1	a Lindström, J. L.4 aut
700	1	a Bremser, M. D.4 aut
700	1	a Davis, R. F.4 aut
700	1	a Amano, H.4 aut
700	1	a Akasaki, I.4 aut
710	2	a Linköpings universitetb Tekniska högskolan4 org
773	0	t Physical review. B, Condensed matter and materials physicsg 60:3, s. 1746-1751q 60:3<1746-1751
856	4 8	u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-45141
856	4 8	u https://doi.org/10.1103/PhysRevB.60.1746

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Av författaren/redakt...: Buyanova, Irina, ...; Wagner, Matthias ...; Chen, Weimin, 19 ...; Edwards, N. V.; Monemar, Bo, 194 ...; Lindström, J. L.; visa fler...; Bremser, M. D.; Davis, R. F.; Amano, H.; Akasaki, I.; visa färre...

Artiklar i publikationen: Physical review. ...

Av lärosätet: Linköpings universitet

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