Sökning: onr:"swepub:oai:DiVA.org:liu-45293" >
Growth of 4H-SiC Ep...
Growth of 4H-SiC Epitaxial Layers on 4° Off-axis Si-face substrates
-
- Henry, Anne, 1959- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
- Leone, Stefano, 1978- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
- Pedersen, Henrik, 1981- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
visa fler...
-
- Kordina, Olle (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
-
- Janzén, Erik, 1954- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
visa färre...
-
(creator_code:org_t)
- Trans Tech Publications, 2009
- 2009
- Engelska.
-
Ingår i: Materials Science Forum, Vols. 615-617. - : Trans Tech Publications. - 9780878493340 ; , s. 81-84
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.4...
-
visa färre...
Abstract
Ämnesord
Stäng
- CVD growth of epitaxial layers with a mirror like surface grown on 75 mm diameter 4° off-axis 4H SiC substrates is demonstrated. The effect of the C/Si ratio, temperature and temperature ramp up conditions is studied in detail. A low C/Si ratio of 0.4 and a temperature of 1530 °C is the best combination to avoid step bunching and triangular defects on the epitaxial layers. Using a low growth rate (about 3 µm/h) 6 μm thick, n-type doped epilayers were grown on 75 mm diameter wafers resulting in an RMS value of 0.7 nm and good reproducibility. 20 μm thick epitaxial layers with a background doping in the low 1014 cm-3 were grown with a mirror-like, defect-free surface. Preliminary results when using higher Si/H2 ratio (up to 0.4 %) and HCl addition are also presented: growth rate of 28 μm/h is achieved while keeping a smooth morphology.
Nyckelord
- NATURAL SCIENCES
- NATURVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
Hitta via bibliotek
Till lärosätets databas