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Lateral enlargement...
Lateral enlargement of silicon carbide crystals
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Jacobson, H. (författare)
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Raback, P. (författare)
- Råback, P., Center of Scientific Computing, Box 405, FIN-02101 Espoo, Finland
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- Syväjärvi, Mikael (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Henry, Anne (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Tuomi, T. (författare)
- Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3000, 02015 TKK, Finland
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- Janzén, Erik (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- Elsevier BV, 2004
- 2004
- Engelska.
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 270:1-2
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A new growth technique for lateral enlargement of silicon carbide crystals is presented and evaluated. The technique is based on PVT growth but modified with respect to temperature gradients and geometry as compared to conventional setup. Simulation of the temperature distribution for lateral growth as well as the growth mechanism is discussed. High-resolution X-ray diffraction and synchrotron white beam X-ray topography have been evaluated concerning structural defects. The results show that this growth technique makes it possible to enlarge seed crystals without threading screw dislocations and micropipes along the 0001 direction, but stacking faults are introduced due to the crystal stacking sequence along the <11¯00> directions. © 2004 Elsevier B.V.
Nyckelord
- A1. Crystal structure
- A1. High resolution X-ray diffraction
- A1. X-ray topography
- A2. Growth from vapor
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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