Sökning: onr:"swepub:oai:DiVA.org:liu-47638" > MBE growth and prop...
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000 | 04041naa a2200445 4500 | |
001 | oai:DiVA.org:liu-47638 | |
003 | SwePub | |
008 | 091011s2000 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-476382 URI |
024 | 7 | a https://doi.org/10.1016/S0022-0248(00)00041-52 DOI |
040 | a (SwePub)liu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Ivanov, S.V.u Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation4 aut |
245 | 1 0 | a MBE growth and properties of bulk BeCdSe alloys and digital (BeSe :b CdSe)/ZnSe quantum wells |
264 | 1 | c 2000 |
338 | a print2 rdacarrier | |
520 | a We report for the first time on MBE growth, structural and optical properties of single layers, quantum well structures and short-period superlattices based on BexCd1-xSe ternary alloys on GaAs. Both the conventional MBE growth mode and the sub-monolayer digital alloying technique (SDA) have been employed for the fabrication of the structures. Compositional boundaries of an instability region 0.03 < x < 0.38, calculated in a regular solution approximation for the completely coherent system, agree well with available experimental data. A suppression of the phase separation in BeCdSe by elastic stress in the layer, accompanied by a strong reduction of the Cd incorporation coefficient has been found. Ultrathin 2.8 ML BeCdSe SDA QWs with x approx. 0.15 demonstrate about an order of magnitude increase in the PL intensity with respect to the pure CdSe one, probably resulting from an enhanced carrier localization efficiency. Eg as a function of the Be content reveals a strong bowing in optical data, which allows one to consider BeCdSe alloys with compositions nearly lattice-matched to GaAs as potential materials for the active region of blue-green lasers. | |
653 | a TECHNOLOGY | |
653 | a TEKNIKVETENSKAP | |
700 | 1 | a Toropov, A.A.u Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation4 aut |
700 | 1 | a Shubina, T.V.u Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation4 aut |
700 | 1 | a Lebedev, A.V.u Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation4 aut |
700 | 1 | a Sorokin, S.V.u Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation4 aut |
700 | 1 | a Sitnikova, A.A.u Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation4 aut |
700 | 1 | a Kop'Ev, P.S.u Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation4 aut |
700 | 1 | a Reuscher, G.u Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany4 aut |
700 | 1 | a Keim, M.u Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany4 aut |
700 | 1 | a Bensing, F.u Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany4 aut |
700 | 1 | a Waag, A.u Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany4 aut |
700 | 1 | a Landwehr, G.u Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany4 aut |
700 | 1 | a Pozina, Galiau Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)galpo50 |
700 | 1 | a Bergman, Pederu Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)pedbe86 |
700 | 1 | a Monemar, Bou Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)bomo46 |
710 | 2 | a Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federationb Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany4 org |
773 | 0 | t Journal of Crystal Growthg 214, s. 109-114q 214<109-114x 0022-0248x 1873-5002 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-47638 |
856 | 4 8 | u https://doi.org/10.1016/S0022-0248(00)00041-5 |
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