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Sublimation epitaxy...
Sublimation epitaxy of AIN layers on 4H-SiC depending on the type of crucible
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- Beshkova, Milena (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Zakhariev, Z (författare)
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- Birch, Jens (författare)
- Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
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visa fler...
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- Kakanakova-Georgieva, Anelia, 1970- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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visa färre...
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(creator_code:org_t)
- 2003
- 2003
- Engelska.
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Ingår i: Journal of materials science. Materials in electronics. - 0957-4522 .- 1573-482X. ; 14:10-12, s. 767-768
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- Epitaxial layers of aluminum nitride less than or equal to335 mum thick have been grown attemperatures of 1900 and 2100degreesC on 10 x 10 mm(2) (0001)-oriented alpha(4H) silicon carbide (SiC), with growth times of 1 and 4h, via sublimation-recondensation in a RF-heated graphite furnace. The source material was polycrystalline AIN. The sublimation process was performed in three types of graphite (C) crucible: C-1, C-2 with inner diameters of 35 and 51 mm, respectively, and C-3 with the same inner diameter as C-1, but coated with a layer of TaC. The surface morphology reflects the hexagonal symmetry of the substrate, suggesting an epitaxial growth for samples grown in C-1 and C-3 crucibles for all growth conditions. The same symmetry is observed for AIN layers grown in the C-2 crucible, but only at 2100degreesC. X-ray diffraction analyses confirm the epitaxial growth of AIN samples with the expected hexagonal symmetry. A high-resolution X-ray diffractometer was used to assess the quality of the single crystals. A full width at half maximum of 242 arcsec was achieved for an AIN layer grown in the crucible coated with TaC. (C) 2003 Kluwer Academic Publishers.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
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