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New tunnel Schottky...
New tunnel Schottky SiC devices using mixed conduction ceramics
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Cerda, J (författare)
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Morante, JR (författare)
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- Lloyd-Spets, Anita (författare)
- Linköpings universitet,Tekniska högskolan,Tillämpad Fysik
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(creator_code:org_t)
- 2002
- 2002
- Engelska.
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Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 433-4, s. 949-952
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- A new tunnel Schottky diode based on SiC and a mixed conductor of BaSnO3 as the gate has been investigated. I-V curves at different operating temperatures and two different gas atmospheres have been measured. The device shows sensitivity to oxygen, with maximum at 400degreesC. A model that describes the behaviour of the device is proposed, which takes into account the different types of conduction of the BaSnO3 due to the temperature.
Nyckelord
- BaSnO3
- gas sensor
- oxygen
- Schottky diode
- SiC
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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