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Photoluminescence o...
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Monemar, BoLinköpings universitet,Tekniska högskolan,Halvledarmaterial
(författare)
Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells
- Artikel/kapitelEngelska2002
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LIBRIS-ID:oai:DiVA.org:liu-48720
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-48720URI
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Språk:engelska
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Sammanfattning på:engelska
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We report on a detailed study of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells (MQWs) with an In composition x in the QWs of about 0.1, and a small In composition y in the barrier of 0.01-0.02. The MOVPE growth procedure was optimized to allow growth without In segregation. The InyGa1-yN barriers had a Si doping of about 5 x 10(18) cm(-3) . The low temperature photoluminescence spectra show two sets of exciton-like spectra with quite different properties. The lower energy emission has a small thermal activation energy (about 5 meV), and thus disappears at elevated temperatures, it is not observed at room temperature. The higher energy exciton state has a decay time of about 5 ns, while the lower energy process is much slower. We have also done preliminary studies on samples where the MQW region is situated in a p-n junction field, with semi-transparent contacts, to study the effects of varying the bias across the MQW structure. The combination of optical data can e interpreted in terms of a substantial potential gradient across the MQW region for both samples. The conclusion is that probably only one QW is emitting at low T (and no bias), and the second lower energy PL peak originates from a shallow notch in the conduction band at the interface between the thick GaN buffer layer and the first Ga(In)N barrier.
Ämnesord och genrebeteckningar
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TECHNOLOGY
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TEKNIKVETENSKAP
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Paskov, PlamenLinköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)plapa31
(författare)
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Bergman, JPLinkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 468, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 468, Japan
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Pozina, GaliaLinköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)galpo50
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Paskova, TanjaLinköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi(Swepub:liu)tanpa12
(författare)
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Kamiyama, SLinkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 468, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 468, Japan
(författare)
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Iwaya, MLinkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 468, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 468, Japan
(författare)
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Amano, HLinkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 468, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 468, Japan
(författare)
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Akasaki, ILinkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 468, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 468, Japan
(författare)
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Linköpings universitetTekniska högskolan
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Physica status solidi. A, Applied research190:1, s. 161-1660031-89651521-396X
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