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Modeling of the fre...
Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN
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- Arnaudov, B (författare)
- Faculty of Physics, Sofia University, Sofia, Bulgaria
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- Paskova, Tanja (författare)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Goldys, EM (författare)
- Semiconductor Science and Technology Laboratories, Macquarie University, Sydney, Australia
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- Evtimova, S (författare)
- Faculty of Physics, Sofia University, Sofia, Bulgaria
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- Monemar, Bo (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- 2001
- 2001
- Engelska.
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 64:4
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We simulate the spectral distribution of the free-electron recombination band in optical emission spectra of GaN with a free-carrier concentration in the range of 5 x 10(17)-1 x 10(20) cm(-3). The influence of several factors, such as nonparabolicity, electron-electron interaction. and electron-impurity interaction on both the spectral and energy position and the effective gap narrowing are taken into account. The calculated properties of the free-electron-related emission bands are used to interpret the experimental photoluminescence and cathodoluminescence spectra of GaN epitaxial layers.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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