Sökning: onr:"swepub:oai:DiVA.org:liu-49272" >
Implantation temper...
Implantation temperature dependent deep level defects in 4H-SiC
-
- Aberg, D (författare)
- Royal Inst Technol, SE-16440 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
-
- Storasta, Liutauras (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
- Hallen, A (författare)
- Royal Inst Technol, SE-16440 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
-
visa fler...
-
Svensson, BG (författare)
-
visa färre...
-
(creator_code:org_t)
- 2001
- 2001
- Engelska.
-
Ingår i: Materials Science Forum, Vols. 353-356. ; , s. 443-446
- Relaterad länk:
-
https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- Deep level transient spectroscopy spectra of the near Z-defect region (150-350K) were investigated for B implanted samples of low doses (10(8)-10(9) cm(-2)). For 300 degreesC implantation, a level at an energy of 0.41 eV below the conduction hand edge was found, referred to as the S-level. The S-center was shown to form in both implanted and electron irradiated 4H-SiC, either after room temperature (R.T.) implantation followed by mild heat treatments or lung R.T. storage (several months) or after 200-300 degreesC implantations/irradiations. The S-center was found to anneal out at temperatures above 250 degreesC.
Nyckelord
- deep level
- DLTS
- ion implantation
- S-level
- temperature stable defects
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)