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Improvements in the...
Improvements in the electrical performance of high voltage 4H-SiC Schottky diodes by hydrogen annealing
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- Wahab, Qamar Ul (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Macak, EB (författare)
- Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
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Zhang, J (författare)
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visa fler...
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- Madsen, LD (författare)
- Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
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- Janzén, Erik (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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visa färre...
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(creator_code:org_t)
- 2001
- 2001
- Engelska.
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Ingår i: Materials Science Forum, Vols. 353-356. ; , s. 691-694
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- A significant improvement in all the important parameters of the diodes were observed by annealing in H-2 at 300 degreesC. The forward current increased from 55 mA to 100 mA at a bias voltage of 2.5 V. The reverse leakage current measured at -500 V was reduced from 3.5 x 10(-9) to 4.8 x 10(-10) Amps for a 0.5 mm diameter diode. The average value of the barrier height increased by at least 0.2 eV, measured by Capacitance-Voltage and Current-Voltage technique indicating the increase of both static and effective barrier heights. The average value of ideality factor also improved and a best value of 1.06 was obtained for the hot-wall CVD grown samples after Hz annealing. Hydrogen atoms may passivate the dangling bends at the metal-semiconductor interface and thus by saturating the dangling bonds reduce the interface state density.
Nyckelord
- dangling bond
- hydrogen annealing
- interface state density
- power devices
- Schottky diodes
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)