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Strain in a-plane G...
Strain in a-plane GaN layers grown on r-plane sapphire substrates
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- Roder, C. (författare)
- Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
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- Einfeldt, S. (författare)
- Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany, Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
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- Figge, S. (författare)
- Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
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- Hommel, D. (författare)
- Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany
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- Paskova, Tanja (författare)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- Monemar, Bo (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Haskell, B.A. (författare)
- Materials Department, University of California, Santa Barbara, CA 93106-5050, United States, NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, United States
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- Fini, P.T. (författare)
- Materials Department, University of California, Santa Barbara, CA 93106-5050, United States, NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, United States
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- Speck, J.S. (författare)
- Materials Department, University of California, Santa Barbara, CA 93106-5050, United States, NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, United States
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- Nakamura, S. (författare)
- Materials Department, University of California, Santa Barbara, CA 93106-5050, United States, NICP/ERATO JST, UCSB Group, University of California, Santa Barbara, CA 93106-5050, United States
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Institute of Solid State Physics, University of Bremen, PO. Box 330440, 28334 Bremen, Germany Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany, Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany (creator_code:org_t)
- Wiley, 2006
- 2006
- Engelska.
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Ingår i: Physica Status Solidi (A) Applications and Materials. - : Wiley. - 1862-6300. ; 203:7, s. 1672-1675
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- The strain in a-plane GaN layers of different thickness grown on r-plane sapphire substrates by hydride vapor phase epitaxy was studied by X-ray diffraction. The layers are found to be under compression in the growth plane and under tension in the growth direction. Therefore, the symmetry of the GaN unit cell is no longer hexagonal but orthorhombic. With increasing layer thickness the strain relaxes and the curvature of the wafer increases. Wafer bending is proposed to be the major strain relaxation mechanism. The anisotropic in-plane strain relaxation is attributed to the elastic and thermal anisotropy of GaN and sapphire. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.
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Roder, C.
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Einfeldt, S.
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Figge, S.
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Hommel, D.
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Paskova, Tanja
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Monemar, Bo
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visa fler...
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Haskell, B.A.
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Fini, P.T.
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Speck, J.S.
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Nakamura, S.
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