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Measurement of micr...
Measurement of micrometer diffusion lengths by nuclear spectrometry
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- Strokan, N.B. (författare)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation
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- Ivanov, A.M. (författare)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation
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- Lebedev, A.A. (författare)
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation
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- Syväjärvi, Mikael (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Ioffe Physicotechnical Institute, Russian Academy of Sciences, St Petersburg, 194021, Russian Federation Tekniska högskolan (creator_code:org_t)
- Pleiades Publishing Ltd, 2005
- 2005
- Engelska.
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 39:12, s. 1394-1398
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A method for determination of diffusion lengths in the range 0.5-50 µm, which corresponds to carrier lifetimes in the nanosecond range, is suggested A calibrated nonequilibrium charge is injected into the base of the reverse-biased diode structure. The injection is provided by alpha particles generated by natural decay in the single-particle counting mode. The nuclear spectrometry technique is used to measure the amount of charge that diffused across the base to the boundary of the electric-field region. The loss of charge during the diffusion is calculated as a function of the depth of alpha particle penetration beyond the electric-field region. The derived power-law functions make it possible to relate the diffusion length with the exponent and numerical factor that describes the loss of charge. The experiment is performed with lightly doped 4H-SiC epitaxial films. © 2005 Pleiades Publishing, Inc.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
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