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Formation and charg...
Formation and charge control of a quantum dot by etched trenches and multiple gates
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- Fu, Y (författare)
- Chinese Academy of Science, Beijing
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- Willander, Magnus (författare)
- Chalmers
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- Wang, T H (författare)
- Chinese Academy of Science, Beijing
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(creator_code:org_t)
- Springer Science Business Media, 2002
- 2002
- Engelska.
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Ingår i: Applied Physics A. - : Springer Science Business Media. - 0947-8396 .- 1432-0630. ; 74:6, s. 741-745
- Relaterad länk:
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https://urn.kb.se/re...
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visa fler...
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https://doi.org/10.1...
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visa färre...
Abstract
Ämnesord
Stäng
- We have fabricated a GaAs/InGaAs/AlGaAs-based single-electron transistor (SET) formed by etched trenches and multiple gates. Clear Coulomb-blockade oscillations have been observed when the gate biases are scanned. By self-consistently solving three-dimensional Schrodinger and Poisson equations, we have studied the energy-band structure and the carrier distribution of our SET. General agreement between numerical simulation results and measurement data has been obtained, thus indicating the effectiveness of our SET-device design as well as the necessity of a complete three-dimensional quantum-mechanical simulation.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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