Sökning: onr:"swepub:oai:DiVA.org:liu-59219" >
Effects of nitrogen...
Effects of nitrogen incorporation on the properties of GaInNAs/GaAs quantum well structures
-
- Zhao, QX (författare)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg,Chalmers University of Technology
-
- Wang, Shu Min, 1963 (författare)
- Chalmers University of Technology,Chalmers tekniska högskola
-
- Sadeghi, Mahdad, 1964 (författare)
- Chalmers University of Technology,Chalmers tekniska högskola
-
visa fler...
-
- Larsson, Anders, 1957 (författare)
- Chalmers University of Technology,Chalmers tekniska högskola
-
- Willander, Magnus (författare)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg,Chalmers University of Technology
-
- Yang, JH (författare)
- Chalmers University of Technology,Jilin Normal University
-
visa färre...
-
(creator_code:org_t)
- American Institute of Physics, 2005
- 2005
- Engelska.
-
Ingår i: Journal of Applied Physics. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 97:7
- Relaterad länk:
-
http://dx.doi.org/10...
-
visa fler...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
https://gup.ub.gu.se...
-
https://research.cha...
-
visa färre...
Abstract
Ämnesord
Stäng
- We report results from theoretical and experimental investigations of GaInNAs/GaAs quantum well structures. Optical transition energies for samples with different In and N concentrations were determined by photoluminescence measurements. The results show that the reduction of the ground-state transition energy by the introduction of N decreases with increasing In concentration. The experimental data are compared with calculations using the effective-mass approximation. Modifications of the band-gap energy due to N incorporation were accounted for using the two-level repulsion model. Proper effective-mass and band offset values, based on recent experimental work, were used. Calculated and measured transition energies show good agreement. The critical thickness, lattice constant, strain, and optical transition energies are discussed for GaInNAs/GaAs quantum well structures tuned for emission at 1.3 and 1.55 mu m, in particular. Such a simple model, within the effective-mass approximation, is a very useful guide for device design. (C) 2005 American Institute of Physics.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas