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Linear polarized ph...
Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrix
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- Zhuravlev, K S (författare)
- Physics Dept, Novosibirsk
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- Alexandrov, I A (författare)
- Physics Dept, Novosibirsk
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- Holtz, Per-Olof, 1951- (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- 2010-07-20
- 2010
- Engelska.
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Ingår i: physica status solidi c. - : Wiley. - 1862-6351 .- 1610-1642.
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- We report microphotoluminescence studies of GaN/AlN quantum dots grown along the (0001) crystal axis by molecular-beam epitaxy on sapphire substrates. To obtain quantum dots with different density and size a nominal GaN coverage was varied from 1 to 4 monolayers. The highest density of quantum dots was about 1011 cm-2, so about 103 quantum dots was excited in experiments. We found that the photoluminescence intensity of a sample with the smallest amount of deposited GaN decreases in more than two orders of magnitude under continuous-wave laser exposure during about 30 minutes and then it remains stable. The photoluminescence intensity of the rest samples was time-independent quantity. The emission band of the former sample exhibits a prominent linear polarization along the growth plane. We assume that the quite high degree of polarization can be due anisotropy of strain and/or shape of the quantum dots formed near dislocations which act also as recombination centers causing photoluminescence quenching.
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