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Defects in low-ener...
Defects in low-energy electron-irradiated n-type 4H-SiC
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- Beyer, Franziska (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Hemmingsson, Carl, 1964- (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Pedersen, Henrik, 1981- (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Henry, Anne (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Isoya, J. (författare)
- University of Tsukuba
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- Morishita, N. (författare)
- Japan Atomic Energy Agency
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- Ohshima, T. (författare)
- University of Tsukuba
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- Janzén, Erik (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- IOP Publishing, 2010
- 2010
- Engelska.
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Ingår i: Physica Scripta, vol. T141. - : IOP Publishing. ; , s. 014006-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The bistable M-center, previously observed in high-energy proton-implanted 4H-SiC, was detected in low-energy electron-irradiated 4H-SiC using deep-level transient spectroscopy (DLTS). Irradiation increased the DLTS signals of the intrinsic defects Z(1/2) and EH6/7 and introduced the frequently observed defects EH1 and EH3. After the M-center is annealed out at about 650K without bias and at about 575K with bias applied to the sample during the annealing process, a new bistable defect in the low temperature range of the DLTS spectrum, the EB-center, evolves. Since low-energy irradiation affects mainly the carbon atoms in SiC, the M-center and the newly discovered EB-center are most probably carbon-related intrinsic defects.
Nyckelord
- NATURAL SCIENCES
- NATURVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)