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Interface chemistry...
Interface chemistry of WN/4H-SiC structures
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- Kakanakova-Georgieva, Anelia, 1970- (författare)
- Bulgarian Academy of Sciences, Sofia
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- Kassamakova, L (författare)
- Bulgarian Academy of Sciences, Plovdiv, Bulgaria
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- Marinova, Ts. (författare)
- Bulgarian Academy of Sciences, Sofia
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- Kakanakov, R. (författare)
- Bulgarian Academy of Sciences, Plovdiv, Bulgaria
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- Noblanc, O. (författare)
- Thomson-CSF/LCR, Orsay Cedex, France
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- Arnodo, C. (författare)
- Thomson-CSF/LCR, Orsay Cedex, France
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- Cassette, S. (författare)
- Thomson-CSF/LCR, Orsay Cedex, France
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- Brylinski, C. (författare)
- Thomson-CSF/LCR, Orsay Cedex, France
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(creator_code:org_t)
- 1999
- 1999
- Engelska.
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Ingår i: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 151:3-4, s. 225-232
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The interface chemistry of WN/4H–SiC structures has been studied by means of X-ray photoelectron spectroscopy (XPS). XPS investigations have been performed on as deposited, 800°C and 1200°C annealed (4 min) samples. The as deposited and 800°C annealed samples are characterized by chemically inert interfaces. Complete nitrogen out-diffusion from the WN layer, significant carbon diffusion into the contact layer, tungsten carbide and tungsten silicide formation occur during the 1200°C annealing process. The 800°C annealed WN/4H–SiC contacts are found to be of a Schottky type with a barrier height of 0.91 eV. The Schottky barrier height and the ideality factor show no significant changes during 100 h storage at 500°C under nitrogen and during operation at increasing temperature up to 350°C in air.
Nyckelord
- Depth profiling; Electrical properties and measurements; Tungsten nitride; Silicon carbide
- NATURAL SCIENCES
- NATURVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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