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XPS characterizatio...
XPS characterization of tungsten based contact layers on 4H-SiC
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- Kakanakova-Georgieva, Anelia, 1970- (författare)
- Bulgarian Academy of Sciences, Sofia
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- Marinova, Ts. (författare)
- Bulgarian Academy of Sciences, Sofia
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- Noblanc, O. (författare)
- Thomson-CSF/LCR, Orsay Cedex, France
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- Arnodo, C. (författare)
- Thomson-CSF/LCR, Orsay Cedex, France
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- Cassette, S. (författare)
- Thomson-CSF/LCR, Orsay Cedex, France
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- Brylinski, C. (författare)
- Thomson-CSF/LCR, Orsay Cedex, France
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(creator_code:org_t)
- 1999
- 1999
- Engelska.
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 337:1-2, s. 180-183
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Annealed W (WN)/4H–SiC interfaces have been compared on the basis of X-ray photoelectron spectroscopy (XPS) studies. The 1200°C annealed W (WN)/4H–SiC structures are characterized by intense interface reactions leading to tungsten carbide and tungsten silicide formation in the contact layers. The 800°C annealed WN/4H–SiC structure exhibits a chemically inert interface, and the 800°C annealed WN/4H–SiC contact is found to be of a Schottky type with a barrier height of 0.94 eV and an ideality coefficient of 1.09.
Nyckelord
- X-ray photoelectron spectroscopy; Interface reaction; WN/SiC structure
- NATURAL SCIENCES
- NATURVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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