Increasing the Selectivity of Pt-Gate SiC Field Effect Gas Sensors by Dynamic Temperature Modulation

• Based on a diode coupled silicon carbide field effect transistor (FET) with platinum as catalytic gate material, the influence of dynamic temperature modulation on the selectivity of gas analysis sensors FETs has been investigated. This operating mode, studied intensively for semiconductor gas sensors, has only recently been applied to FETs. A suitable temperature cycle for detection of typical exhaust gases (CO, NO, C3H6, H-2, NH3) was developed and combined with appropriate signal processing. The sensor data were evaluated using multivariate statistics, e.g., linear discriminant analysis. Measurements have proven that typical exhaust gases can be discriminated in backgrounds with 0, 10, and 20% oxygen. Furthermore, we are able to quantify the mentioned gases and to determine unknown concentrations based on training data. Very low levels of relative humidity below a few percent influence the sensor response considerably but for higher levels the cross interference of humidity is negligible. In addition, experiments regarding stability and reproducibility were performed.

Nyckelord

Metal insulator silicon carbide field effect transistors (MISiC FET)

NOx

selectivity

temperature modulation

virtual multisensor

TECHNOLOGY

TEKNIKVETENSKAP

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