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CVD growth of 3C-Si...
CVD growth of 3C-SiC on 4H-SiC substrate
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- Henry, Anne (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Li, Xun (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Leone, Stefano (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Kordina, Olof (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Janzén, Erik (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Trans Tech Publications Inc. 2012
- 2012
- Engelska.
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Ingår i: Materials Science Forum Vol 711. - : Trans Tech Publications Inc.. ; , s. 16-21
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 1350 °C. The ramp up-conditions and the gas-ambient atmosphere when the temperature increases are key factors for the quality of the obtained 3C layers. The best pre-growth ambient found is carbon rich environment; however time of this pre-treatment is crucial. A too high C/Si ratio during growth led to polycrystalline material whereas for too low C/Si ratios Si cluster formation is observed on the surface. The addition of nitrogen gas is also explored.
Publikations- och innehållstyp
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- kon (ämneskategori)