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Study of deep level...
Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method
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- Asghar, M. (författare)
- Islamia University of Bahawalpur, Pakistan
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- Iqbal, F. (författare)
- Islamia University of Bahawalpur, Pakistan
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- Faraz, Sadia Municha (författare)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Jokubavicius, Valdas (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Wahab, Qamar (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Syväjärvi, Mikael (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Elsevier, 2012
- 2012
- Engelska.
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Ingår i: Physica B: Condensed Matter. - : Elsevier. - 0921-4526.
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- Deep level transient spectroscopy (DLTS) is employed to study deep level defects in n-6H-SiC (silicon carbide) epilayers grown by the sublimation method. To study the deep level defects in n-6H-SiC, we used as-grown, nitrogen doped and nitrogen-boron co-doped samples represented as ELS-1, ELS-11 and ELS-131 having net (N-D-N-A) similar to 2.0 x 10(12) cm(-3), 2 x 10(16) cm(-3) and 9 x 10(15) cm(3), respectively. The DLTS measurements performed on ELS-1 and ELS-11 samples revealed three electron trap defects (A, B and C) having activation energies E-c - 0.39 eV, E-c - 0.67 eV and E-c - 0.91 eV, respectively. While DLTS spectra due to sample ELS-131 displayed only A level. This observation indicates that levels B and C in ELS-131 are compensated by boron and/or nitrogen-boron complex. A comparison with the published data revealed A, B and C to be E-1/E-2, Z(1)/Z(2) and R levels, respectively.
Nyckelord
- n-Type 6H-SiC; Sublimation growth process; DLTS; Deep level defects; Surface defect; Co-doping
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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