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Electron paramagnet...
Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC
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- Son Tien, Nguyen (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Trinh, Xuan Thang (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Gällström, Andreas (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Leone, Stefano (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Kordina, Olle (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Janzén, Erik (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Szasz, Krisztian (författare)
- Hungarian Academic Science, Hungary
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- Ivady, Viktor (författare)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan
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- Gali, Adam (författare)
- Hungarian Academic Science, Hungary Budapest University of Technology and Econ, Hungary
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(creator_code:org_t)
- American Institute of Physics (AIP), 2012
- 2012
- Engelska.
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 112:8, s. 083711-
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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http://liu.diva-port...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- High purity silicon carbide (SiC) materials are of interest from high-power high temperature applications across recent photo-voltaic cells to hosting solid state quantum bits, where the tight control of electrically, optically, and magnetically active point defects is pivotal in these areas. 4H- and 6H-SiC substrates are grown at high temperatures and the incorporation of transition metal impurities is common. In unintentionally Nb-doped 4H- and 6H-SiC substrates grown by high-temperature chemical vapor deposition, an electron paramagnetic resonance (EPR) spectrum with C-1h symmetry and a clear hyperfine (hf) structure consisting of ten equal intensity hf lines was observed. The hf structure can be identified as due to the interaction between the electron spin S - 1/2 and the nuclear spin of Nb-93. Additional hf structures due to the interaction with three Si neighbors were also detected. In 4H-SiC, a considerable spin density of similar to 37.4% was found on three Si neighbors, suggesting the defect to be a complex between Nb and a nearby carbon vacancy (V-C). Calculations of the Nb-93 and Si-29 hf constants of the neutral Nb on Si site, Nb-Si(0), and the Nb-vacancy defect, NbSiVC0, support previous reported results that Nb preferentially forms an asymmetric split-vacancy (ASV) defect. In both 4H- and 6H-SiC, only one Nb-related EPR spectrum has been observed, supporting the prediction from calculations that the hexagonal-hexagonal defect configuration of the ASV complex is more stable than others.
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- TECHNOLOGY
- TEKNIKVETENSKAP
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