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Surface preparation...
Surface preparation of 4 degrees off-axis 4H-SIC substrate for epitaxial growth
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- Li, Xun (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- ul Hassan, Jawad (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Kordina, Olof (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Janzén, Erik (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Henry, Anne (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Trans Tech Publications Inc. 2013
- 2013
- Engelska.
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Ingår i: Materials Science Forum (Volumes 740 - 742). - : Trans Tech Publications Inc.. ; , s. 225-228
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- Results of surface preparation on Si-face 4° off-cut 4H-SiC substrates are presented in this paper. The influences of two types of etchants, i.e. hydrogen chloride (HCl) and only hydrogen (H2), were investigated by Nomarski microscopy and AFM. The experiments were performed in a hot wall CVD reactor using a TaC coated susceptor. Four etching temperatures, including 1580 °C, 1600 °C, 1620 °C and 1640 °C, were studied. In-situ etching with only H2 as ambient atmosphere is found to be the optimal way for the SiC surface preparation. Using HCl at temperature higher than 1620 °C could degrade the substrates surface quality.
Nyckelord
- 4H-SiC Substrates
- CVD
- Surface Preparation
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)