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Phase Space for the...
Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene
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- Alexander-Webber, J. A. (författare)
- University of Oxford, England
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- Baker, A. M. R. (författare)
- University of Oxford, England
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- Janssen, T. J. B. M. (författare)
- National Phys Lab, England
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- Tzalenchuk, A (författare)
- National Phys Lab, England
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- Lara Avila, Samuel, 1983 (författare)
- Chalmers, Sweden,Chalmers tekniska högskola,Chalmers University of Technology
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- Kubatkin, Sergey, 1959 (författare)
- Chalmers, Sweden,Chalmers tekniska högskola,Chalmers University of Technology
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Piot, B A. (författare)
- LNCMI CNRS UJF INSA UPS, France
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- Maude, D K. (författare)
- LNCMI CNRS UJF INSA UPS, France
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- Nicholas, R J. (författare)
- University of Oxford, England
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(creator_code:org_t)
- American Physical Society, 2013
- 2013
- Engelska.
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Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 111:9, s. e096601-
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Abstract
Ämnesord
Stäng
- We report the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30 T. At 2 K, breakdown currents (Ic) almost 2 orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state (ρxx=0) shows a [1-(T/Tc)2] dependence and persists up to Tc>45 K at 29 T. With magnetic field Ic was found to increase ∝B3/2 and Tc∝B2. As the Fermi energy approaches the Dirac point, the ν=2 quantized Hall plateau appears continuously from fields as low as 1 T up to at least 19 T due to a strong magnetic field dependence of the carrier density.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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