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H2* defect in cryst...
H2* defect in crystalline silicon
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- Holbech, J. D. (författare)
- Institute of Physics and Astronomy, University of Aarhus, DK-8000, Århus C, Denmark
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- Bech Nielsen, B. (författare)
- Institute of Physics and Astronomy, University of Aarhus, DK-8000, Århus C, Denmark
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- Jones, R. (författare)
- Department of Physics, University of Exeter, EX44QL, Exeter, United Kingdom
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- Stich, S. (författare)
- Department of Physics, University of Exeter, EX44QL, Exeter, United Kingdom
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- Öberg, Sven (författare)
- Luleå tekniska universitet,Matematiska vetenskaper
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(creator_code:org_t)
- 1993
- 1993
- Engelska.
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 71:6, s. 875-878
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Detailed infrared studies have been carried out on proton- and deuteron-implanted Si. A dominant trigonal defect involving a pair of inequivalent hydrogen atoms has been identified, with local modes at 2061.5, 1838.3, 1599.1, and 817.2 cm-1. The structure, the local modes, and the isotopic shifts of the H2* defect have been calculated using ab initio pseudopotential cluster theory. The structure is consistent with channeling and uniaxial stress experiments. The calculated frequencies and isotopic shifts are in close agreement with those observed.
Ämnesord
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Nyckelord
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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