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The formation, diss...
The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si
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- Coutinho, J. (författare)
- Department of Physics, University of Aveiro
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- Jones, R. (författare)
- School of Physics, University of Exeter
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- Öberg, Sven (författare)
- Luleå tekniska universitet,Matematiska vetenskaper
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- Briddon, P.R. (författare)
- School of Natural Science, University of Newcastle upon Tyne
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(creator_code:org_t)
- Elsevier BV, 2003
- 2003
- Engelska.
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Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 340, s. 523-527
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Density functional calculations are carried out on divacancy-oxygen (V2O and V2O2) complexes in silicon, paying particular attention to their formation and dissociation mechanisms as well as their electrical activity. The formation of V2O around 220°C is controlled by the diffusion of V2 to immobile oxygen traps, while it dissociates around 300°C into VO and V. V2O and V2O2 are found to possess deep single and double acceptor levels as well as deep donor levels similar to those of V2.
Ämnesord
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Nyckelord
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
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- art (ämneskategori)
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