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Dislocation related...
Dislocation related photoluminescence in silicon
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- Blumenau, A. T. (författare)
- School of Physics, University of Exeter, Exeter EX4 4QL, United Kingdom; Theoretische Physik, Universität Paderborn, 33098 Paderborn, Germany
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- Jones, R. (författare)
- School of Physics, University of Exeter, Exeter EX4 4QL, United Kingdom
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- Öberg, Sven (författare)
- Luleå tekniska universitet,Matematiska vetenskaper
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- Briddon, P. R. (författare)
- Department of Physics, University of Newcastle upon Tyne, Newcastle upon Tyne NE1 7RU, United Kingdom
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- Frauenheim, T. (författare)
- Theoretische Physik, Universität Paderborn, 33098 Paderborn, Germany
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(creator_code:org_t)
- 2001
- 2001
- Engelska.
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 87:18
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Dislocation related photoluminescence in Si and SiGe is attributed to stable interstitial clusters bound to 60° dislocations. Density functional based total energy calculations in Si give binding energies between 1.5 and 3.6 eV for I3 and I4 clusters with 90° and 30° partials. They possess donor levels around Ev+0.4 eV which are consistent with deep level transient spectroscopic studies on p-Si. It is further suggested that the clusters would act as the obstacles to the movement of dislocations which may have been observed in recent transmission electron microscopy studies.
Ämnesord
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Nyckelord
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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