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Comparative charact...
Comparative characteristics of Na0.5K0.5NbO 3 films on Pt by pulsed laser deposition and magnetron sputtering
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- Khartsev, Sergiy (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT,Department of Condensed Matter Physics, Royal Institute of Technology, SE-164 40 Stockholm-Kista, Sweden
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- Grishin, Alex (författare)
- Department of Condensed Matter Physics, Royal Institute of Technology, SE-164 40 Stockholm-Kista, Sweden
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- Andrèasson, Johanna (författare)
- Luleå tekniska universitet
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- Koh, J-H (författare)
- Electric and Magnetic Devices Research Group, Electrotechnology Research Institute, Changwon, South Korea
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- Song, J-S (författare)
- Electric and Magnetic Devices Research Group, Electrotechnology Research Institute, Changwon, South Korea
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- Grishin, Alexander M. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- 2010-06-18
- 2003
- Engelska.
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Ingår i: Integrated Ferroelectrics. - : Informa UK Limited. - 1058-4587 .- 1607-8489. ; 55, s. 769-779
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- Ferroelectric Na0.5K0.5NbO3 (NKN) thin films were grown on the Pt80Ir20 polycrystalline substrates by pulsed laser deposition (PLD) and radio frequency-magnetron sputtering (RF) technique using the same stoichiometric Na0.5K 0.5NbO3 ceramic target. X-ray diffraction proved both PLD- and RF-made Na0.5K0.5NbOj/Pt80Ir20 films are single phase and have preferential c-axis orientation. Temperature dependence of dielectric permittivity reveals the presence of two phase transitions around 210 and 410°C. Capacitance vs. applied voltage C-V @ 100 kHz, I-V, and P-E hysteresis characteristics recorded for the vertical capacitive structures yielded loss tan δ = 0.026 and 0.016, tunability about 44.5 and 30% @ 100 kV/cm, Ohmic resistivity 6.7 × 1012 Ω·cm and 0.2 × 1012 Ω·cm, remnant polarization 11.7 and 9.7 μC/cm2, coercive field 28.0 and 94.6 kV/cm for PLD- and RF-films, respectively. Piezoelectric test carried out in hydrostatic conditions showed piezoelectric coefficient dH = 21 for PLD-NKN and 15 pC/N for RF-NKN film.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
Nyckelord
- K-factor
- Leakage current
- Na0.5K0.5NbO3 (NKN) films
- Piezoelectric coefficient dH
- Pulsed laser deposition (PLD)
- RF-magnetron sputtering
- Tunability
- Engineering Materials
- Materialteknik
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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