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Dislocations in hex...
Dislocations in hexagonal and cubic GaN
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- Blumenau, A.T. (författare)
- University of Exeter
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- Elsner, J. (författare)
- University of Exeter
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- Jones, R. (författare)
- University of Exeter
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- Heggie, M.I. (författare)
- University of Sussex
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- Öberg, Sven (författare)
- Luleå tekniska universitet,Matematiska vetenskaper
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- Frauenheim, T. (författare)
- Universität Paderborn
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- Briddon, P.R. (författare)
- University of Newcastle Upon Tyne
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(creator_code:org_t)
- 2000-11-21
- 2000
- Engelska.
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Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 12, s. 10223-10233
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The structure and electronic activity of several types of dislocations in both hexagonal and cubic GaN are calculated using first-principles methods. Most of the stoichiometric dislocations investigated in hexagonal GaN do not induce deep acceptor states and thus cannot be responsible for the yellow luminescence. However, it is shown that electrically active point defects, in particular gallium vacancies and oxygen-related defect complexes, can be trapped at the stress field of the dislocations and may be responsible for this luminescence. For cubic GaN, we find the ideal stoichiometric 60° dislocation to be electrically active and the glide set to be more stable than the shuffle. The dissociation of the latter is considered
Ämnesord
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Nyckelord
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
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- art (ämneskategori)
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