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Structures of dislo...
Structures of dislocations in GaAs and their modification by impurities
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- Stich, P. (författare)
- Department of Physics, University of Exeter
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- Jones, R (författare)
- Department of Physics, University of Exeter
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- Öberg, Sven (författare)
- Luleå tekniska universitet,Matematiska vetenskaper
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- Heggie, M.I. (författare)
- Department of Computer Science, University of Exeter
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(creator_code:org_t)
- 1994
- 1994
- Engelska.
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 50, s. 17717-17720
- Relaterad länk:
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https://ltu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Local density functional theory is used to show that both α and β dislocations in GaAs are reconstructed. This is done by relaxing large 158-atom H-terminated clusters of GaAs containing 90° partial dislocations. The reconstruction is strongly influenced by impurities: acceptor pairs destroy the reconstruction of β partials but strengthen it for α dislocations. Donors have opposite effects. The implication of these results for the pinning of dislocations in GaAs is discussed.
Ämnesord
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Nyckelord
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
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