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Epitaxial Growth an...
Epitaxial Growth and Determination of Band Alignment of Bi2Te3–WSe2 Vertical van der Waals Heterojunctions
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- Yang, Chih-Wen (författare)
- Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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- Tang, Hao-Ling (författare)
- Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States,King Abdullah University of Science & Technology (KAUST), Saudi Arabia;Massachusetts Institute of Technology, USA
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- Sattar, Shahid (författare)
- Luleå tekniska universitet,Materialvetenskap,Luleå University of Technology, Sweden
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- Chiu, Ming-Hui (författare)
- Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States,King Abdullah University of Science & Technology (KAUST), Saudi Arabia;Massachusetts Institute of Technology, USA
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- Wan, Yi (författare)
- Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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- Chen, Chia-Hao (författare)
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
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- Kong, Jing (författare)
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States,Massachusetts Institute of Technology, USA,Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electronic Engineering, and Green Technology Research Center, Chang-Gung University, Taoyuan 333, Taiwan
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- Huang, Kuo-Wei (författare)
- Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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- Li, Lain-Jong (författare)
- Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia Department of Electronic Engineering, and Green Technology Research Center, Chang-Gung University, Taoyuan 333, Taiwan
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- Tung, Vincent (författare)
- Physical Science and Engineering Division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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(creator_code:org_t)
- 2020-09-14
- 2020
- Engelska.
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Ingår i: ACS Materials Letters. - : American Chemical Society (ACS). - 2639-4979. ; 2:10, s. 1351-1359
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Abstract
Ämnesord
Stäng
- Artificial heterojunctions formed by vertical stacking of dissimilar two-dimensional (2D) transition metal dichalcogenide (TMD) monolayer materials in a chosen sequence hold tantalizing prospects for futuristic atomically thin circuits. The emergence of 2D topological insulators (TI), including Bi2Te3, Bi2Se3, and Sb2Te3, represents a new class of 2D building blocks and can complement the existing artificial heterojunctions as a result of their intriguing surface states protected by the time-reversal symmetry. However, the determination of band alignments of such 2D TI/TMD vertical heterojunctions, the key parameter for designing HJ-based electronic/photonic devices, which lies in the development of epitaxy growth, remains in its infancy. Here, we demonstrate the epitaxy growth of 2D TI/TMD vertical heterojunctions comprised of Bi2Te3/WSe2 with atomically clean interfaces that are spectroscopically accessible, and theoretically tractable. Cross-sectional scanning transmission electron microscopy (STEM) images and the presence of interlayer-coupled characteristics from Raman spectroscopy collectively confirm the neat stacking of Bi2Te3/WSe2 with the absence of unwanted containments. Microbeam X-ray photoelectron spectroscopy (ΌXPS) measurement coupled with the density functional theory (DFT) calculations and electrical characteristics of field effect transistors quantitatively reveals the type-II alignment of vertically stacked of quintuple layers (QL) Bi2Te3/WSe2. Meanwhile, the type-III band emerges when transitioning to multi-quintuple layer (MQL) Bi2Te3/WSe2. The finding here provides a well-defined example of the epitaxy growth paradigm, the interlayer coupling-electronic properties relationship, for these emerging 2D TI/TMDs vertical heterojunctions. © 2020 American Chemical Society.
Ämnesord
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
Nyckelord
- Alignment
- Density functional theory
- Electric field effects
- Electronic properties
- Field effect transistors
- Heterojunctions
- High resolution transmission electron microscopy
- Scanning electron microscopy
- Transition metals
- Van der Waals forces
- X ray photoelectron spectroscopy
- Cross-sectional scanning
- Electrical characteristic
- Electronic/photonic devices
- Interlayer coupling
- Time reversal symmetries
- Transition metal dichalcogenides
- Two Dimensional (2 D)
- Vertical stacking
- Bismuth compounds
- Applied Physics
- Tillämpad fysik
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Yang, Chih-Wen
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Tang, Hao-Ling
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Sattar, Shahid
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Chiu, Ming-Hui
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Wan, Yi
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Chen, Chia-Hao
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visa fler...
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Kong, Jing
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Huang, Kuo-Wei
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Li, Lain-Jong
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Tung, Vincent
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