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Modelling and optim...
Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments
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- Edwards, Michael (författare)
- University of Bath
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- Vittoz, S. (författare)
- CNRS
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- Amen, Rafael (författare)
- RISE,IVF
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- Rufer, L. (författare)
- CNRS
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- Johander, Per (författare)
- RISE,IVF
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- Bowen, C.R. (författare)
- University of Bath
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(creator_code:org_t)
- 2010
- 2010
- Engelska.
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Ingår i: Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. - 9781424485758 ; , s. 127-130
- Relaterad länk:
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http://ieeexplore.ie...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C. ©2010 IEEE.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
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