Simulation-driven development of a novel SiC embedded power module design concept

• Silicon carbide embedded power modules enable a compact and cost competitive packaging solution for high-switching frequency and high-temperature operation applications. Power module packaging technologies span several engineering domains. At the early design stage, simulation-driven development is necessary to shorten the design period and reduce the design cost. This paper presents a novel design concept of a three-phase embedded power module (1200 V, 20 A, 55 mm × 36 mm × 0.808 mm) including silicon carbide metal-oxide-semiconductor field-effect transistor and antiparallel diode dies. Based on the E/CAD design data different layer built-up designs have been tested against thermal, mechanical, and electrical behavior. The obtained simulation data then have been evaluated against a commercial available power module (Motion Smart Power Module SMP33) which utilizes over mold direct bonded copper substrates with soldered semiconductor dies and bond wire contacts. Compared to the conventional module, the loop conductive interconnection parasitic inductance and resistance of the design concept (Vdc+ to Vdc-) reduces approximately by 88 % and 72 %, respectively. The average junction to case thermal resistance has been improved by approximately more than 10 % even though the total package size reduces by approximately 88 %. Furthermore, the contours of deformation and stresses have been investigated for the design concept in the thermomechanical simulation.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Carbide dies

Chip scale packages

Field effect transistors

High temperature applications

High temperature operations

Metals

Microelectronics

Microsystems

MOS devices

MOSFET devices

Oxide semiconductors

Semiconducting silicon

Silicon carbide

Substrates

Wide band gap semiconductors

Anti-parallel diodes

Deformation and stress

Direct bonded coppers

Early design stages

Electrical behaviors

High switching frequencies

Parasitic inductances

Thermomechanical simulation

Electric power systems

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