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Drain-current deep ...
Drain-current deep level transient spectroscopy investigation on epitaxial graphene/6H-SiC field effect transistors
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- Roensch, Sebastian (författare)
- Lehrstuhl für Angewandte Physik, Germany
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- Hertel, Stefan (författare)
- Lehrstuhl für Angewandte Physik, Germany
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- Reshanov, Sergey A. (författare)
- RISE,Acreo
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- Schoener, Adolf (författare)
- RISE,Acreo
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- Krieger, Michael (författare)
- Lehrstuhl für Angewandte Physik, Germany
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- Weber, Heiko B. (författare)
- Lehrstuhl für Angewandte Physik, Germany
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(creator_code:org_t)
- 2014
- 2014
- Engelska.
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Ingår i: Mater. Sci. Forum. - 9783038350101 ; , s. 436-439
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- The electrically active deep levels in a graphene/silicon carbide field effect transistor (FET) were investigated by drain-current deep level transient spectroscopy (ID-DLTS). An evaluation procedure for ID-DLTS is developed in order to obtain the activation energy, the capture cross section and the trap concentration. We observed three defect centers corresponding to the intrinsic defects E1/E2, Ei and Z1/Z2 in n-type 6H-SiC. The determined parameters have been verified by conventional capacitance DLTS.
Nyckelord
- Activation energy
- Deep level transient spectroscopy
- Defects
- Silicon carbide
- Capture cross sections
- Deep-levels
- Defect centers
- Electrically actives
- Epitaxial graphene
- Intrinsic defects
- Trap concentration
- Field effect transistors
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