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Design and characte...
Design and characterization of newly developed 10 kV 2 A SiC p-i-n diode for soft-switching industrial power supply
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- Bakowski, Mietek (författare)
- RISE,Acreo
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- Ranstad, P. (författare)
- Alstom Power Sweden AB, Sweden
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- Lim, Jang-Kwon (författare)
- RISE,Acreo
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visa fler...
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- Kaplan, Wlodek (författare)
- RISE,Acreo,Ascatron AB, Sweden
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- Reshanov, Sergey (författare)
- RISE,Acreo,Ascatron AB, Sweden
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- Schoner, Adolf (författare)
- RISE,Acreo,Ascatron AB, Sweden
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- Giezendanner, F. (författare)
- Alstom Power Sweden AB, Sweden
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- Ranstad, A. (författare)
- Alstom Power Sweden AB, Sweden
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers Inc. 2015
- 2015
- Engelska.
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Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers Inc.. - 0018-9383 .- 1557-9646. ; 62:2, s. 366-373
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- 10 kV, 2 A SiC p-i-n diodes have been designed and fabricated. The devices feature excellent stability of forward characteristics and robust junction termination with avalanche capability of 1 J. The fabricated diodes have been electrically evaluated with respect to dynamic ON-state voltage, reverse recovery behavior, bipolar stability, and avalanche capability. More than 60% reduction of losses has been demonstrated using newly developed 10-kV p-i-n diodes in a multikilowatt high voltage, high-frequency dc/dc soft-switching converter
Nyckelord
- 4H-SiC
- avalanche energy
- bipolar degradation
- carrier lifetime
- dynamic on-resistance
- Junction Termination Extension (JTE)
- p-i-n diode
- soft switching
- DC-DC converters
- Diodes
- Semiconductor junctions
- Silicon carbide
- Switching circuits
- Avalanche energies
- Bipolar degradations
- Junction termination extensions
- On-resistance
- PiN diode
- Avalanche diodes
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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