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Effect of annealing...
Effect of annealing atmosphere on the diode behaviourof zno/si heterojunction
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- Faraz, Sadia (författare)
- NED University of Engineering and Technology, Pakistan,NED Univ Engn & Technol, Pakistan
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- Jafri, Syed (författare)
- NED University of Engineering and Technology, Pakistan,NED Univ Engn & Technol, Pakistan
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- Tajvar, Zarreen (författare)
- NED University of Engineering and Technology, Pakistan,NED Univ Engn & Technol, Pakistan
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- Ul Hassan Alvi, Naveed (författare)
- RISE,Smart hårdvara,RISE Res Inst Sweden, Sweden
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- Wahab, Qamar Ul (författare)
- Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska fakulteten
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- Nur, Omer (författare)
- Linköpings universitet,Fysik, elektroteknik och matematik,Tekniska fakulteten
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(creator_code:org_t)
- 2021-08-17
- 2021
- Engelska.
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Ingår i: Elektronika ir Elektrotechnika. - : Kauno Technologijos Universitetas. - 1392-1215 .- 2029-5731. ; 27:4, s. 49-54
- Relaterad länk:
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https://doi.org/10.5...
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https://eejournal.kt...
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.5...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- The effect of thermal annealing atmosphere on the electrical characteristics of Zinc oxide (ZnO) nanorods/p-Silicon (Si) diodes is investigated. ZnO nanorods are grown by low-temperature aqueous solution growth method and annealed in Nitrogen and Oxygen atmosphere. As-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characteristics of ZnO/Si heterojunction diodes are studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Improvements in rectifying behaviour, ideality factor, carrier concentration, and series resistance are observed after annealing. The ideality factor of 4.4 for as-grown improved to 3.8 and for Nitrogen and Oxygen annealed improved to 3.5 nanorods diodes. The series resistances decreased from 1.6 to 1.8 times after annealing. An overall improved behaviour is observed for oxygen annealed heterojunction diodes. The study suggests that by controlling the ZnO nanorods annealing temperatures and atmospheres the electronic and optoelectronic properties of ZnO devices can be improved.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Heterojunction
- Series resistance
- ZnO annealing
- ZnO nanorods
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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