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Sökning: onr:"swepub:oai:DiVA.org:ri-59328" > Highly efficient UV...

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FältnamnIndikatorerMetadata
00006627naa a2200769 4500
001oai:DiVA.org:ri-59328
003SwePub
008220620s2022 | |||||||||||000 ||eng|
009oai:research.chalmers.se:42652d68-d562-4743-9997-19e7d841271c
009oai:DiVA.org:liu-185397
0247 a https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-593282 URI
0247 a https://doi.org/10.1063/5.00902192 DOI
0247 a https://research.chalmers.se/publication/5305482 URI
0247 a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1853972 URI
040 a (SwePub)rid (SwePub)cthd (SwePub)liu
041 a engb eng
042 9 SwePub
072 7a ref2 swepub-contenttype
072 7a art2 swepub-publicationtype
1001 a He, Hansu RISE,Mätteknik,Chalmers University of Technology, Sweden,Chalmers tekniska högskola,RISE Research Institutes of Sweden,Chalmers Univ Technol, Sweden; RISE Res Inst Sweden, Sweden4 aut0 (Swepub:cth)hanshe
2451 0a Highly efficient UV detection in a metal-semiconductor-metal detector with epigraphene
264 1b American Institute of Physics Inc.c 2022
338 a print2 rdacarrier
500 a Funding details: Stiftelsen för Strategisk Forskning, SSF, 2019-00068, GMT14-0077, RMA15-0024; Funding text 1: This work was jointly supported by the Swedish Foundation for Strategic Research (Nos. GMT14-0077 and RMA15-0024), Chalmers Excellence Initiative Nano, and 2D TECH VINNOVA competence Center (Ref. No. 2019-00068). This work was performed in part at Myfab Chalmers.
500 a Funding Agencies|Swedish Foundation for Strategic Research [GMT14-0077, RMA15-0024]; Chalmers Excellence Initiative Nano, and 2D TECH VINNOVA competence Center [2019-00068]
520 a We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T >1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal-semiconductor-metal (MSM) detectors with a peak external quantum efficiency of η ∼85% for wavelengths λ = 250-280 nm, corresponding to nearly 100% internal quantum efficiency when accounting for reflection losses. Zero bias operation is possible in asymmetric devices, with the responsivity to UV remaining as high as R = 134 mA/W, making this a self-powered detector. The low dark currents Io ∼50 fA translate into an estimated record high specific detectivity D = 3.5 × 1015 Jones. The performance that we demonstrate, together with material reproducibility, renders epigraphene technologically attractive to implement high-performance planar MSM devices with a low processing effort, including multi-pixel UV sensor arrays, suitable for a number of practical applications. © 2022 Author(s).
650 7a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronikx Annan elektroteknik och elektronik0 (SwePub)202992 hsv//swe
650 7a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineeringx Other Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)202992 hsv//eng
650 7a NATURVETENSKAPx Fysikx Acceleratorfysik och instrumentering0 (SwePub)103062 hsv//swe
650 7a NATURAL SCIENCESx Physical Sciencesx Accelerator Physics and Instrumentation0 (SwePub)103062 hsv//eng
650 7a TEKNIK OCH TEKNOLOGIERx Kemiteknikx Annan kemiteknik0 (SwePub)204992 hsv//swe
650 7a ENGINEERING AND TECHNOLOGYx Chemical Engineeringx Other Chemical Engineering0 (SwePub)204992 hsv//eng
650 7a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe
650 7a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng
653 a Efficiency
653 a Metals
653 a Quantum efficiency
653 a Silicon detectors
653 a Epitaxial graphene
653 a External quantum efficiency
653 a Highest temperature
653 a Internal quantum efficiency
653 a Metal-semiconductor-metal detectors
653 a Performance
653 a Reflection loss
653 a Solar blind ultraviolet
653 a Ultra violet detection
653 a Ultraviolet detection
653 a Silicon carbide
7001 a Shetty, Naveen,d 1988u Chalmers University of Technology, Sweden,Chalmers tekniska högskola,Chalmers Univ Technol, Sweden4 aut0 (Swepub:cth)snaveen
7001 a Kubatkin, Sergey,d 1959u Chalmers University of Technology, Sweden,Chalmers tekniska högskola,Chalmers Univ Technol, Sweden4 aut0 (Swepub:cth)kubatkin
7001 a Stadler, Pascal,d 1986u Chalmers University of Technology, Sweden,Chalmers tekniska högskola,Chalmers Univ Technol, Sweden4 aut0 (Swepub:cth)pascals
7001 a Löfwander, Tomas,d 1972u Chalmers University of Technology, Sweden,Chalmers tekniska högskola,Chalmers Univ Technol, Sweden4 aut0 (Swepub:cth)lofwande
7001 a Fogelström, Mikael,d 1963u Chalmers University of Technology, Sweden,Chalmers tekniska högskola,Chalmers Univ Technol, Sweden4 aut0 (Swepub:cth)fogelstr
7001 a Miranda-Valenzuela, JCu Tecnologico de Monterrey, Mexico,Instituto Tecnológico y de Estudios Superiores de Monterrey (ITESM),Monterrey Institute of Technology and Higher Education (ITESM),Tecnol Monterrey, Mexico4 aut
7001 a Yakimova, Rositsau Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Graphens AB, Sweden4 aut0 (Swepub:liu)rosia15
7001 a Bauch, Thilo,d 1972u Chalmers University of Technology, Sweden,Chalmers tekniska högskola,Chalmers Univ Technol, Sweden4 aut0 (Swepub:cth)bauch
7001 a Lara Avila, Samuel,d 1983u Chalmers University of Technology, Sweden,Chalmers tekniska högskola,National Physical Laboratory (NPL),Chalmers Univ Technol, Sweden; Natl Phys Lab, England4 aut0 (Swepub:cth)larsavil
7102 a RISEb Mätteknik4 org
7730 t Applied Physics Lettersd : American Institute of Physics Inc.g 120:19q 120:19x 0003-6951x 1077-3118
8564 u https://doi.org/10.1063/5.0090219y Fulltext
8564 u https://research.chalmers.se/publication/530548/file/530548_Fulltext.pdfx primaryx freey FULLTEXT
8564 u https://liu.diva-portal.org/smash/get/diva2:1662926/FULLTEXT01.pdfx primaryx Raw objecty fulltext:print
8564 8u https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-59328
8564 8u https://doi.org/10.1063/5.0090219
8564 8u https://research.chalmers.se/publication/530548
8564 8u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-185397

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