Sökning: onr:"swepub:oai:DiVA.org:uu-10518" >
Thermal stability o...
Thermal stability of Ti3SiC2 thin films
-
- Emmerlich, Jens (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
-
- Music, Denis (författare)
- Materials Chemistry, RWTH Aachen University, Germany
-
- Eklund, Per (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
-
visa fler...
-
- Wilhelmsson, Ola (författare)
- Uppsala universitet,Oorganisk kemi,Department of Materials Chemistry, Uppsala University, Uppsala, Sweden
-
- Jansson, Ulf (författare)
- Uppsala universitet,Oorganisk kemi,Department of Materials Chemistry, Uppsala University, Uppsala, Sweden
-
- Schneider, Jochen M. (författare)
- Materials Chemistry, RWTH Aachen University, Germany
-
- Högberg, Hans (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
-
- Hultman, Lars (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
-
visa färre...
-
(creator_code:org_t)
- Elsevier BV, 2007
- 2007
- Engelska.
-
Ingår i: Acta Materialia. - : Elsevier BV. - 1359-6454 .- 1873-2453. ; 55:4, s. 1479-1488
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.1...
-
https://urn.kb.se/re...
-
visa färre...
Abstract
Ämnesord
Stäng
- The thermal stability of Ti3SiC2(0 0 0 1) thin films is studied by in situ X-ray diffraction analysis during vacuum furnace annealing in combination with X-ray photoelectron spectroscopy, transmission electron microscopy and scanning transmission electron microscopy with energy dispersive X-ray analysis. The films are found to be stable during annealing at temperatures up to 1000 °C for 25 h. Annealing at 1100–1200 °C results in the rapid decomposition of Ti3SiC2 by Si out-diffusion along the basal planes via domain boundaries to the free surface with subsequent evaporation. As a consequence, the material shrinks by the relaxation of the Ti3C2 slabs and, it is proposed, by an in-diffusion of O into the empty Si-mirror planes. The phase transformation process is followed by the detwinning of the as-relaxed Ti3C2 slabs into (1 1 1)-oriented TiC0.67 layers, which begin recrystallizing at 1300 °C. Ab initio calculations are provided supporting the presented decomposition mechanisms.
Ämnesord
- NATURVETENSKAP -- Kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences (hsv//eng)
Nyckelord
- Ti3SiC2 thin films
- Phase transformations
- X-ray diffraction
- Transmission electron microscopy
- Ab initio electron theory
- Chemistry
- Kemi
- NATURAL SCIENCES
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas