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A 2 GHz oscillator ...
A 2 GHz oscillator using a monolithically integrated AlN TFBAR
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- Norling, Martin, 1981 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Enlund, Johannes (författare)
- Uppsala universitet,Fasta tillståndets elektronik,Tunnfilmsgruppen,Uppsala University
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- Katardjiev, Ilia (författare)
- Uppsala universitet,Fasta tillståndets elektronik,Tunnfilmsgruppen,Uppsala University
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- Gevorgian, Spartak, 1948 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- ISBN 9781424417803
- 2008
- 2008
- Engelska.
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Serie: IEEE MTT-S International Microwave Symposium Digest, 0149-645X
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781424417803 ; 1:1, s. 843-846
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- A 2 GHz oscillator based on a solidly mounted AlN thin-film bulk acoustic resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon multi-chip module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a high-resistivity silicon (HRS) carrier. SiGe transistors are flip-chip mounted on the MCM carrier. Measurements of the oscillators reveal a best phase-noise of -125 dBc/Hz at 100 kHz offset.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Ge-Si alloys
- III-V semiconductors
- acoustic resonators
- aluminium compounds
- flip-chip devices
- multichip modules
- oscillators
- phase noise
- semiconductor thin films
- thin film devices
- transistors
- wide band gap semiconductors
- AlN
- AlN TFBAR
- AlN thin-film bulk acoustic resonator
- Si
- SiGe
- SiGe transistors
- frequency 2 GHz
- high-resistivity silicon
- oscillator
- silicon-on-silicon multi-chip module
- Acoustic resonator
- TFBAR
- hybrid integration
- multi-chip module
- oscillator
- thin film device
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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