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A novel self-refres...
A novel self-refreshable capacitorless DRAM cell and its extended applications
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Wang, Peng-Fei (författare)
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Liu, Lei (författare)
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- Wu, Dongping (författare)
- Dept. of Microelectronics, Fudan University, Shanghai, China
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Zang, Song-Gan (författare)
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Liu, Wei (författare)
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Gong, Yi (författare)
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- Zhang, Wei (författare)
- Dept. of Microelectronics, Fudan University, Shanghai, China
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- Zhang, Shi-Li (författare)
- Uppsala universitet,Fasta tillståndets elektronik
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Dept of Microelectronics, Fudan University, Shanghai, China Fasta tillståndets elektronik (creator_code:org_t)
- Elsevier BV, 2010
- 2010
- Engelska.
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 54:9, s. 985-990
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A novel DRAM cell based on floating junction gate (FJG) concept is investigated for its extended applications. Compared to the two-transistor floating gate DRAM cell, the new memory cell investigated in the present work has a much simpler configuration with only one transistor. Besides, its write speed is improved by introducing an integrated gated-diode so that state “1” can be self-refreshable. In this paper, the device configuration, the DRAM application feasibility, the self-refreshing ability, and the non-destructive read are explored. In addition, extended applications of the DRAM cell using the FJG concept will be discussed.
Nyckelord
- Capacitorless DRAM
- Image sensor
- MOSFET
- Tunneling FET
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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