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Gate coupling and c...
Gate coupling and carrier distribution in silicon nanowire/nanoribbon transistors operated in electrolyte
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- Chen, Si (författare)
- Uppsala universitet,Fasta tillståndets elektronik
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- Zhang, Shi-Li (författare)
- Uppsala universitet,Fasta tillståndets elektronik
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(creator_code:org_t)
- American Vacuum Society, 2011
- 2011
- Engelska.
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Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 29:1, s. 011022-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- The transfer characteristics of back-gate silicon nanowire/nanoribbon (NW/NR) transistors measured in electrolyte exhibit a significantly higher on-current and a steeper subthreshold behavior than measured in air. Simulation results show that the gate capacitance for a NW/NR of a trapezoidal cross-section immersed in water is significantly higher than that exposed to air. Electrostatics simulations further show that for NWs/NRs with small widths, carriers are mainly accumulated at the two side-edges when they are immersed in water. Even the top surface of the NWs/NRs sees more accumulated carriers than the bottom one does; the latter is in fact located closest to the back-gate. These observations suggest that the interface properties at the side-edges and the top surface are crucial for NW/NR transistors to achieve high sensitivity when performing real-time sensing experiments in electrolyte. Finally, the sensitivity of back-gate NW/NR field-effect transistors to charge changes in electrolyte is found to have a weak dependence on the NW/NR width when the doping concentration is below 10(17) cm(-3). For higher NW/NR doping concentrations, narrower NWs/NRs are more sensitive.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
- Engineering Science with specialization in Electronics
- Teknisk fysik med inriktning mot elektronik
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