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On Different Proces...
On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain
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- Luo, Jun (author)
- KTH,Integrerade komponenter och kretsar,School of Information and Communication Technology, KTH, Kista,Fudan University
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- Wu, Dongping (author)
- State Key Lab of ASIC & Systems, School of Microelectronics, Fudan University, Shanghai, China,State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai
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- Qiu, Zhijun (author)
- State Key Lab of ASIC & Systems, School of Microelectronics, Fudan University, Shanghai, China,State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai
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- Lu, Jun (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Hultman, Lars (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar,School of Information and Communication Technology, KTH, Kista,Royal Institute of Technology KTH
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- Zhang, Shi-Li (author)
- Uppsala universitet,Fasta tillståndets elektronik,State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai
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(creator_code:org_t)
- IEEE Institute of Electrical and Electronics, 2011
- 2011
- English.
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In: IEEE Transactions on Electron Devices. - : IEEE Institute of Electrical and Electronics. - 0018-9383 .- 1557-9646. ; 58:7, s. 1898-1906
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Subject headings
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- This paper focuses on different silicidation schemes toward a controllable NiSi-based metallic source/drain (MSD) process with restricted lateral encroachment of NiSi. These schemes include thickness control of Ni, Ni-Pt alloying, and two-step annealing. Experimental results show that all the three process schemes can give rise to effective control of lateral encroachment during Ni silicidation. By controlling t(Ni), NiSi-based MSD metal-oxide-semiconductor field-effect transistors (MOSFETs) of gate length L-G = 55 nm are readily realized on ultrathin-body silicon-on-insulator substrates with 20-nm surface Si thickness. With the aid of dopant segregation (DS) to modifying the Schottky barrier heights of NiSi, both n- and p-type MSD MOSFETs show significant performance improvement, compared to reference devices without DS.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Contacts
- MOSFETs
- silicides
- TECHNOLOGY
- TEKNIKVETENSKAP
- Engineering Science with specialization in Electronics
- Teknisk fysik med inriktning mot elektronik
- Electrical engineering, electronics and photonics
Publication and Content Type
- ref (subject category)
- art (subject category)
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