Transport behavior of holes in boron delta-doped diamond structures

Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity, and field-effect mobility measurements was completed. This was supported by Schrodinger-Poisson and relaxation time calculations based upon application of Fermi's golden rule. A two carrier-type model was developed with an activation energy of similar to 0.2 eV between the delta layer lowest subband with mobility similar to 1 cm(2)/Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm(2)/Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device.

Friel, Ian (författare)
Hepplestone, Steven (författare)
Isberg, JanUppsala universitet,Elektricitetslära(Swepub:uu)jaisb133 (författare)
Uren, Michael J. (författare)
Markham, Matthew L. (författare)
Palmer, Nicola L. (författare)
Pilkington, James (författare)
Huggett, Paul (författare)
Majdi, SamanUppsala universitet,Elektricitetslära(Swepub:uu)samma947 (författare)
Lang, Richard (författare)
Uppsala universitetElektricitetslära (creator_code:org_t)

Ingår i:Journal of Applied Physics: AIP Publishing113:3, s. 033702-0021-89791089-7550

Av författaren/redakt...: Balmer, Richard ...; Friel, Ian; Hepplestone, Ste ...; Isberg, Jan; Uren, Michael J.; Markham, Matthew ...; visa fler...; Palmer, Nicola L ...; Pilkington, Jame ...; Huggett, Paul; Majdi, Saman; Lang, Richard; visa färre...

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