Sökning: onr:"swepub:oai:DiVA.org:uu-281226" > Growth, intermixing...
Fältnamn | Indikatorer | Metadata |
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000 | 04195naa a2200649 4500 | |
001 | oai:DiVA.org:uu-281226 | |
003 | SwePub | |
008 | 160321s2016 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-2812262 URI |
024 | 7 | a https://doi.org/10.1116/1.49414112 DOI |
040 | a (SwePub)uu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Hägglund, Carl,d 1975-u Uppsala universitet,Fasta tillståndets elektronik,Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA,Thin film solar cells4 aut0 (Swepub:uu)carha577 |
245 | 1 0 | a Growth, intermixing, and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer deposition |
264 | c 2016-02-08 | |
264 | 1 | b American Vacuum Society,c 2016 |
338 | a electronic2 rdacarrier | |
520 | a A broad and expanding range of materials can be produced by atomic layer deposition at relatively low temperatures, including both oxides and metals. For many applications of interest, however, it is desirable to grow more tailored and complex materials such as semiconductors with a certain doping, mixed oxides, and metallic alloys. How well such mixed materials can be accomplished with ALD requires knowledge of the conditions under which the resulting films will be mixed, solid solutions, or laminated. The growth and lamination of zinc oxide and tin oxide is studied here by means of the extremely surface sensitive technique of low energy ion scattering, combined with bulk composition and thickness determination, and X-ray diffraction. At the low temperatures used for deposition (150 °C) there is little evidence for atomic scale mixing even with the smallest possible bilayer period, and instead a morphology with small ZnO inclusions in a SnOx matrix is deduced. Post-annealing of such laminates above 400 °C however produces a stable surface phase with a 30% increased density. From the surface stoichiometry, this is likely the inverted spinel of zinc stannate, Zn2SnO4. Annealing to 800 °C results in films containing crystalline Zn2SnO4, or multilayered films of crystalline ZnO, Zn2SnO4 and SnO2 phases, depending on the bilayer period. | |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Materialteknik0 (SwePub)2052 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Materials Engineering0 (SwePub)2052 hsv//eng |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Nanoteknik0 (SwePub)2102 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Nano-technology0 (SwePub)2102 hsv//eng |
653 | a zinc compounds | |
653 | a X-ray diffraction | |
653 | a semiconductor growth | |
653 | a surface segregation | |
653 | a ion-surface impact | |
653 | a atomic layer deposition | |
653 | a wide band gap semiconductors | |
653 | a laminates | |
653 | a tin compounds | |
653 | a nanofabrication | |
653 | a nanocomposites | |
653 | a annealing | |
653 | a Engineering Science with specialization in Electronics | |
653 | a Teknisk fysik med inriktning mot elektronik | |
653 | a Engineering Science with specialization in Materials Science | |
653 | a Teknisk fysik med inriktning mot materialvetenskap | |
700 | 1 | a Grehl, Thomas4 aut |
700 | 1 | a Tanskanen, Jukka T.4 aut |
700 | 1 | a Yee, Ye Sheng4 aut |
700 | 1 | a Mullings, Marja N.4 aut |
700 | 1 | a Mackus, Adriaan J. M.4 aut |
700 | 1 | a MacIsaac, Callisto4 aut |
700 | 1 | a Clemens, Bruce M.4 aut |
700 | 1 | a Brongersma, Hidde H.4 aut |
700 | 1 | a Bent, Stacey F.4 aut |
710 | 2 | a Uppsala universitetb Fasta tillståndets elektronik4 org |
773 | 0 | t Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Filmsd : American Vacuum Societyg 34:2q 34:2x 0734-2101x 1520-8559 |
856 | 4 | u http://scitation.aip.org/content/avs/journal/jvsta/34/2/10.1116/1.4941411 |
856 | 4 | u https://uu.diva-portal.org/smash/get/diva2:913340/FULLTEXT01.pdfx primaryx Raw objecty fulltext:print |
856 | 4 | u https://doi.org/10.1116/1.4941411 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-281226 |
856 | 4 8 | u https://doi.org/10.1116/1.4941411 |
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