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Effects of Substrat...
Effects of Substrate Bias on Low-Frequency Noise in Lateral Bipolar Transistors Fabricated on Silicon-on-Insulator Substrate
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- Hu, Qitao (författare)
- Uppsala universitet,Fasta tillståndets elektronik
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- Chen, Si, 1982- (författare)
- Uppsala universitet,Fasta tillståndets elektronik
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- Zhang, Shi-Li (författare)
- Uppsala universitet,Fasta tillståndets elektronik
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- Solomon, Paul (författare)
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
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- Zhang, Zhen, 1979- (författare)
- Uppsala universitet,Fasta tillståndets elektronik
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(creator_code:org_t)
- 2020
- 2020
- Engelska.
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 41:1, s. 4-7
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- This letter presents a systematic study of how the substrate bias (Vsub) modulation affects the current-voltage (I-V) characteristics and low-frequency noise (LFN) of lateral bipolar junction transistors (LBJTs) fabricated on a silicon-on-insulator(SOI) substrate. The current gain (β) of npn LBJTs at low base voltage can be greatly improved bya positive Vsub as a result of enhanced electron injection into the base near the buried oxide (BOX)/silicon interface. However, an excessive positive Vsub may also adversely affect the LFN performance by amplifying the noise generated as a result of carrier trapping and detrapping at that interface. Our results provide a practical guideline for improving both β and the overall noise performance when using our LBJT as a local signal amplifier.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- art (ämneskategori)
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