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Antimony-Doped Tin ...
Antimony-Doped Tin Oxide as Transparent Back Contact in Cu2ZnSnS4 Thin-Film Solar Cells
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- Englund, Sven (författare)
- Uppsala universitet,Solcellsteknik
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- Kubart, Tomas, 1977- (författare)
- Uppsala universitet,Fasta tillståndets elektronik
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- Keller, Jan (författare)
- Uppsala universitet,Solcellsteknik
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- Moro, Marcos V. (författare)
- Uppsala universitet,Tillämpad kärnfysik
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- Primetzhofer, Daniel (författare)
- Uppsala universitet,Tillämpad kärnfysik
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- Suvanam, Sethu Saveda (författare)
- Uppsala universitet,Fasta tillståndets elektronik
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- Scragg, Jonathan J., 1983- (författare)
- Uppsala universitet,Fasta tillståndets elektronik
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- Platzer Björkman, Charlotte, 1976- (författare)
- Uppsala universitet,Solcellsteknik
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(creator_code:org_t)
- 2019-09-30
- 2019
- Engelska.
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Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 216:22
- Relaterad länk:
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https://uu.diva-port... (primary) (Raw object)
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http://uu.diva-porta...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Antimony-doped tin oxide (Sn2O3:Sb, ATO) is investigated as a transparent back contact for Cu2ZnSnS4 (CZTS) thin-film solar cells. The stability of the ATO under different anneal conditions and the effect from ATO on CZTS absorber growth are studied. It is found that ATO directly exposed to sulfurizing anneal atmosphere reacts with S, but when covered by CZTS, it does not deteriorate when annealed at T < 550 degrees C. The electrical properties of ATO are even found to improve when CZTS is annealed at T = 534 degrees C. At T = 580 degrees C, it is found that ATO reacts with S and degrades. Analysis shows repeatedly that ATO affects the absorber growth as large amounts of Sn-S secondary compounds are found on the absorber surfaces. Time-resolved anneal series show that these compounds form early during anneal and evaporate with time to leave pinholes behind. Device performance can be improved by addition of Na prior to annealing. The best CZTS device on ATO back contact herein has an efficiency of 2.6%. As compared with a reference on a Mo back contact, a similar open-circuit voltage and short-circuit current density are achieved, but a lower fill factor is measured.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- antimony-doped tin oxides
- Cu2ZnSnS4
- sulfurization
- thin-film solar cells
- transparent back contacts
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- art (ämneskategori)
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