Sökning: onr:"swepub:oai:DiVA.org:uu-422459" >
Rapid Four-Point Sw...
Rapid Four-Point Sweeping Method to Investigate Hysteresis of MoS2 FET
-
- Li, Chen (författare)
- Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
-
- Wen, Chenyu (författare)
- Uppsala universitet,Fasta tillståndets elektronik
-
- Zeng, Ruixue (författare)
- Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
-
visa fler...
-
- Zeng, Shuangshuang (författare)
- Uppsala universitet,Fasta tillståndets elektronik
-
- Qiu, Zhi-Jun (författare)
- Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
-
- Zhang, Zhen, 1979- (författare)
- Uppsala universitet,Fasta tillståndets elektronik
-
- Zhang, Shi-Li (författare)
- Uppsala universitet,Fasta tillståndets elektronik
-
- Wu, Dongping (författare)
- Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
-
visa färre...
-
Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fasta tillståndets elektronik (creator_code:org_t)
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2020
- 2020
- Engelska.
-
Ingår i: IEEE Electron Device Letters. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0741-3106 .- 1558-0563. ; 41:9, s. 1356-1359
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- Hysteresis is a frequently observed phenomenon in the transfer characteristics of thin film transistors. Charge trapping/de-trapping processes of gate oxide and gate-channel interface are commonly known to be the origin of hysteresis and correlated to low frequency noise (LFN) properties of the devices. In this letter, a rapid four-point sweeping method (RFSM) is proposed to reveal the dependence of hysteresis, as well as the distribution of effective trap density on sweeping rate and gate bias range. Based on the RFSM, the hysteresis properties of four-layer MoS2 FETs are studied in detail. The experimental results demonstrate that the hysteresis and trap density at different frequencies and gate voltages, which could further roughly map the traps with different time constants and energy depths, can be obtained by the simple RFSM. Trap density estimated by RFSM shows a comparable range with that extracted from LFN, indicating that the traps inducing the hysteresis may also cause LFN.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Hysteresis
- interface traps
- MoS2 FET
- low frequency noise
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas