Sökning: onr:"swepub:oai:DiVA.org:uu-439116" > Comparison of Sulfu...
Fältnamn | Indikatorer | Metadata |
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000 | 03564naa a2200445 4500 | |
001 | oai:DiVA.org:uu-439116 | |
003 | SwePub | |
008 | 210330s2020 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-4391162 URI |
024 | 7 | a https://doi.org/10.1002/pssa.2020004152 DOI |
040 | a (SwePub)uu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Khavari, Farazu Uppsala universitet,Solcellsteknik4 aut0 (Swepub:uu)farkh109 |
245 | 1 0 | a Comparison of Sulfur Incorporation into CuInSe(2)and CuGaSe(2)Thin-Film Solar Absorbers |
264 | c 2020-09-29 | |
264 | 1 | b WILEY-V C H VERLAG GMBH,c 2020 |
338 | a electronic2 rdacarrier | |
520 | a Herein, sulfurization of CuInSe(2)and CuGaSe2(CGSe) absorber layers is compared to improve the understanding of sulfur incorporation into Cu(In,Ga)Se(2)films by annealing in a sulfur atmosphere. It is found for Cu-poor CuInSe(2)that for an annealing temperature of 430 degrees C, sulfur is incorporated into the surface of the absorber and forms an inhomogeneous CuIn(S,Se)(2)layer. In addition, at 530 degrees C, a surface layer of CuInS(2)is formed. In contrast, for Cu-poor CuGaSe(2)samples, S can only be introduced at 530 degrees C, mainly forming an alloy of CuGa(S,Se)(2), where no closed CuGaS(2)layer is found. In Cu-rich CuGaSe(2)samples, however, selenium is substituted by S already at 330 degrees C, which can be explained by a rapid phase transformation of Cu2 - xSe into Cu2 - x(S,Se). This transformation facilitates S in-diffusion and catalyzes CuGa(S,Se)(2)formation, likewise that previously reported to occur in CuInSe2. Finally, the Cu-poor CuInSe(2)solar cell performance is improved by the sulfurization step at 430 degrees C, whereas for the 530 degrees C sample, a decreasing fill factor and short-circuit current density are observed, indicating lower diffusion length accompanied by possible formation of an electron transport barrier. In contrast, the electrical characteristics deteriorate for all sulfurized Cu-poor CuGaSe(2)cells. | |
650 | 7 | a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe |
650 | 7 | a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng |
653 | a diffusion | |
653 | a elemental sulfur | |
653 | a ordered vacancy compounds | |
653 | a phase transformation | |
653 | a sulfurization | |
700 | 1 | a Keller, Janu Uppsala universitet,Solcellsteknik4 aut0 (Swepub:uu)janke498 |
700 | 1 | a Larsen, Jes Ku Uppsala universitet,Solcellsteknik4 aut0 (Swepub:uu)jenla503 |
700 | 1 | a Sopiha, Kostiantynu Uppsala universitet,Solcellsteknik4 aut0 (Swepub:uu)kosso407 |
700 | 1 | a Törndahl, Tobias,d 1974-u Uppsala universitet,Solcellsteknik4 aut0 (Swepub:uu)totor079 |
700 | 1 | a Edoff, Marika,d 1965-u Uppsala universitet,Solcellsteknik4 aut0 (Swepub:uu)maribode |
710 | 2 | a Uppsala universitetb Solcellsteknik4 org |
773 | 0 | t Physica Status Solidi (a) applications and materials scienced : WILEY-V C H VERLAG GMBHg 217:22q 217:22x 1862-6300x 1862-6319 |
856 | 4 | u https://doi.org/10.1002/pssa.202000415y Fulltext |
856 | 4 | u https://uu.diva-portal.org/smash/get/diva2:1540852/FULLTEXT01.pdfx primaryx Raw objecty fulltext:print |
856 | 4 | u https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/pssa.202000415 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-439116 |
856 | 4 8 | u https://doi.org/10.1002/pssa.202000415 |
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