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Theoretical calcula...
Theoretical calculations of mobility enhancement in strained silicon
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- Dziekan, Thomas (författare)
- Uppsala universitet,Kondenserade materiens teori (Fysik IV),Condensed Matter Theory Group
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Zahn, Peter (författare)
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- Meded, Velimir (författare)
- Uppsala universitet,Kondenserade materiens teori (Fysik IV),Condensed Matter Theory Group
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visa fler...
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- Mirbt, Susanne (författare)
- Uppsala universitet,Kondenserade materiens teori (Fysik IV),Condensed Matter Theory Group
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(creator_code:org_t)
- 2007
- 2007
- Engelska.
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 75:19, s. 195213-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The conductivity enhancement of n -doped Si due to strain has been calculated by solving the Boltzmann equation within the relaxation-time approximation. For T=0 , we determined the Fermi surface from first principles, whereas for T>0 , we modeled the Fermi surface using the effective-mass approximation. We explain the saturation of the conductivity enhancement with increasing strain in terms of the topology of the Fermi surface. We find in accordance with experiment a decreasing enhancement with increasing doping concentration.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- Elemental semiconductors
- Low-field transport and mobility; piezoresistance
- Theory of electronic transport; scattering mechanisms
- Physics
- Fysik
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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