Growth of ultrathin ZrO2 films on Si(100) : film-thickness-dependent band alignment

• The band alignment of ultrathin ZrO2 films of different thickness formed on Si(100) have been monitored with synchrotron radiation photoelectron spectroscopy and x-ray absorption spectroscopy. The films were deposited sequentially by way of metal-organic chemical-vapor deposition in ultrahigh vacuum. A significant decrease in the conduction band offset is found for increasing film thickness. It is accompanied by a corresponding increase of the valence band offset. The variations originate in the formation of an interfacial layer characterized by a lower degree of Zr-O interaction than in bulk ZrO2 but with no clear evidence for partially occupied Zr 4d dangling bonds.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

metal oxides

ZrO2

band offset

Publikations- och innehållstyp

ref (ämneskategori)

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